september 2009 FDMS7656AS n-channel powertrench ? syncfet ? ?2009 fairchild semiconductor corporation FDMS7656AS rev.c www.fairchildsemi.com 1 FDMS7656AS n-channel powertrench ? syncfet ? 30 v, 49 a, 1.8 m ? features ? max r ds(on) = 1 .8 m ? at v gs = 10 v, i d = 30 a ? max r ds(on) = 1.9 m ? at v gs = 7 v, i d = 2 7 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? msl1 robust package design ? 100% uil tested ? rohs compliant general description the FDMS7656AS has been designed to minimize losses in power conversion application. ad vancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. applications ? synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? telecom secondary side rectification 4 3 2 1 5 6 7 8 d d d d s s s g d d d d g s s s pin 1 bottom top mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 49 a -continuous (silicon limited) t c = 25 c 194 -continuous t a = 25 c (note 1a) 31 -pulsed 180 dv/dt mosfet dv/dt 1.3 v/ns e as single pulse avalanche energy (note 3) 242 mj p d power dissipation t c = 25 c 96 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.3 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS7656AS FDMS7656AS power 56 13 ?? 12 mm 3000 units
FDMS7656AS n-channel powertrench ? syncfet ? FDMS7656AS rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 c 19 mv / c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 1 ma 1.2 1.6 3.0 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 10 ma, referenced to 25 c -5 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 30 a 1.3 1.8 m ? v gs = 7 v, i d = 27 a 1.5 1.9 v gs = 4.5 v, i d = 25 a 1.6 2.0 v gs = 10 v, i d = 30 a, t j = 125 c 1.8 2.5 g fs forward transconductance v ds = 5 v, i d = 30 a 161 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 6545 8705 pf c oss output capacitance 2465 3280 pf c rss reverse transfer capacitance 210 315 pf r g gate resistance 0.5 1.1 ? t d(on) turn-on delay time v dd = 15 v, i d = 30 a, v gs = 10 v, r gen = 6 ? 22 35 ns t r rise time 12 21 ns t d(off) turn-off delay time 50 80 ns t f fall time 713ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 30 a 95 133 nc q g total gate charge v gs = 0 v to 4.5 v 43 60 nc q gs gate to source charge 18.2 nc q gd gate to drain ?miller? charge 9.1 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.37 0.7 v v gs = 0 v, i s = 30 a (note 2) 0.74 1.2 t rr reverse recovery time i f = 30 a, di/dt = 300 a/ s 50 81 ns q rr reverse recovery charge 84 136 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3. e as of 242 mj is based on starting t j = 25 c, l = 1 mh, i as = 22 a, v dd = 27 v, v gs = 10 v. 100% test at l = 0.3 mh, i as = 34 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
FDMS7656AS n-channel powertrench ? syncfet ? FDMS7656AS rev.c www.fairchildsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 30 60 90 120 150 180 v gs = 3.5 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 4 v v gs = 3 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 30 60 90 120 150 180 0 1 2 3 4 5 6 v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4 v v gs = 4.5 v v gs = 3 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = 30 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 2 4 6 t j = 125 o c i d = 30 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1234 0 30 60 90 120 150 180 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS7656AS n-channel powertrench ? syncfet ? FDMS7656AS rev.c www.fairchildsemi.com 4 figure 7. 0 20406080100 0 2 4 6 8 10 i d = 30 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 50 100 150 200 v gs = 4.5 v limited by package r t jc = 1.3 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 10 ms dc 1 s 10 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t c = 25 o c 200 figure 12. 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 single pulse r t ja = 125 o c/w t c = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDMS7656AS n-channel powertrench ? syncfet ? FDMS7656AS rev.c www.fairchildsemi.com 5 figure 13. 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
FDMS7656AS n-channel powertrench ? syncfet ? FDMS7656AS rev.c www.fairchildsemi.com 6 0 5 10 15 20 25 30 10 -5 10 -4 10 -3 10 -2 t j = 125 o c t j = 100 o c t j = 25 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) typical characteristics (continued) syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. th is diode exhibi ts similar characteristics to a discrete ex ternal schottky diode in parallel with a mosfet. figure 14 shows the reverses recovery characteristic of the FDMS7656AS. schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. this will increase the power in the device. figure 14. FDMS7656AS syncfet body diode reverse recovery characteristic 0 50 100 150 200 250 -5 0 5 10 15 20 25 30 30 di/dt = 300 a/ s time (ns) current (a) figure 15. syncfet body diode reverses leakage versus drain-source voltage
FDMS7656AS n-channel powertrench ? syncfet ? FDMS7656AS rev.c www.fairchildsemi.com 7 dimensional outlin e and pad layout
FDMS7656AS rev.c www.fairchildsemi.com 8 FDMS7656AS n-channel powertrench ? syncfet ? trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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